Gallium Arsenide - Based Readout Electronics
نویسنده
چکیده
The readout of detector arrays requires the monolithic or hybrid integration of a integrate circuit multiplexer with the detector array. In most LWIR and VLWIR applications, a hybrid approach is used. For example, the detector array may be built from HgCdTe and the readout integrated circuit may be silicon CMOS [1]. The two integrated circuits are mated through a bump-bonding process in which each detector element has its own metallized interconnect (e.g. indium bump) to a corresponding silicon multiplexer unit cell. The multiplexer unit cell may contain an integrating capacitor and other circuitry for amplification and detector biasing as well as for the unit cell readout selection. The vast majority of integrated circuits for this purpose (and for the majority of most other purposes, as well) have been made of silicon. In this paper, the use of GaAs-based integrated circuits instead of silicon CMOS ICs is explored.
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